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256/512M(X4/X8) DDR SDRAM 66TSOP Integrated Circuits

256/512M(X4/X8) DDR SDRAM 66TSOP Integrated Circuits
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Description

256/512M(X4/X8) DDR SDRAM 66TSOP

Product Details

 


 
 


 

MODEL
 LAYER
256/512M(X4/X8) DDR SDRAM 66TSOP
 8
128/256M(X8) DDR SDRAM
 8
128/256M(X16) 60fBGA Low Power(SMD)
 8




Layers
 8 Layers
Core thickness
 32.0 MIL
Patterning
 Tenting
External spec (Min.)
 Conductor width
 4.0 MIL
Conductor space
 4.0 MIL
Thickness
 64.0 MIL
Surface treatment
 Hard gold


Burn-in Boards (BIBs) are used for conducting burn-in tests for screening semiconductor device quality for a variety of sensitivity attributes such as signaling, stress voltage and temperature.

Simmtechs main BIB products are Static Burn-In, Dynamic Burn-In and Intelligent Burn-In.

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JEDEC standard 1.8V ...